As a part of JST PRESTO program, associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...
The AFG24S100HR5 RF power transistor from NXP Semiconductors operates from 1 MHz to 2700 MHz and includes input-matching for extended bandwidth performance. This GaN-on-SiC depletion-mode HEMT device ...
The first generation of GaN transistors has yielded efficient devices that operate at 600V with turn-on and turn-off times of 3.5 nsec and 7.0 nsec, respectively. Switching times are improved through ...
What many engineers once saw as a flaw in organic electronics could actually make these devices more stable and reliable, according to new research from the University of Surrey and Joanneum Research ...
LONDON — Researchers at IMEC are looking at the use of silicon transistors in the sub-threshold region of their operation as a way of pursuing ultra-low power goals. A future SoC for biomedical ...
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Kioxia says it has developed highly stackable oxide-semiconductor channel transistors capable of supporting high-density 3D ...
(Nanowerk News) Our society is insatiable as far as the transfer of data is concerned. Consequently, increasingly faster and cheaper transistors are being developed. In row in recent months, ...
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