High Electron Mobility Transistors (HEMTs) represent a pivotal class of devices in modern semiconductor technology, valued for their exceptional frequency performance and low noise characteristics.
As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications.
Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology. Complementing the company’s ...
From AI-powered processors to atomic-scale transistors, the world of microelectronics is continually being redefined by how small, how powerful, and how energy-efficient devices can become. Whether it ...
High Electron Mobility Transistors (HEMTs) underpin many advanced electronic applications due to their superior performance in high-frequency and high-power regimes. The ongoing miniaturisation and ...
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